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Anleitung Zusammenfassung
Philips Semiconductors Product specification Philips Semiconductors Product specification 6 GENERAL DESCRIPTION The SA7016 BICMOS device integrates programmable dividers, charge pumps and a phase comparator to implement a LOCK phase-locked loop. The device is designed to operate from 3 NiCd TEST cells, in pocket phones, with low current and nominal 3 V supplies. VDD The synthesizer operates at VCO input frequencies up to 1.3 GHz. GND The synthesizer has fully programmable main and reference RFin+ dividers. All divider ratios are supplied via a 3-wire serial programming bus. RFin– Separate power and ground pins are provided to the analog and GNDCP digital circuits. The ground leads should be externally short-circuited PHP to prevent large currents flowing across the die and thus causing 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 PON STROBE DATA CLOCK REFin+ REFin– RSET VDDCP damage. VDDCP must be greater than or equal to VDD. SR01505 The charge pump current (gain) is set by an external resistance at Figure 1. Pin Configuration the RSET pin. Only passive loop filters could be used; the charge pump operates within a wide voltage compliance range to provide a wider tuning range. FEATURES APPLICATIONS • Low phase noise • 350–1300 MHz wireless equipment • Low power • Cellular phones • Fully programmable main divider • Portable battery-powered radio equipment. • Internal fractional spurious compensation • Hardware and software power down • Split supply for VDD and VDDCP QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDD Supply voltage 2.7 – 5.5 V VDDCP Analog supply voltage VDDCP . VDD 2.7 – 5.5 V IDDCP+IDD Total supply current – 6.2 7.3 mA IDDCP+IDD Total supply current in power-down mode – 1 – mA fVCO Input frequency 350 – 1300 MHz fREF Crystal reference input frequency 5 – 40 MHz fPC Maximum phase comparator frequency – 4 MHz Tamb Operating ambient temperature –40 – +85 °C ORDERING INFORMATION TYPE NUMBER TYPE NUMBER PACKAGE NAME DESCRIPTION VERSION SA7016DH TSSOP16 Plastic thin shrink small outline package; 16 leads; body width 4.4 mm SOT403–1 1999 Nov 04 2 853–2160 22634 Philips Semiconductors Product specification Philips Semiconductors Product specification 6 SR01506 CLOCK DATA STROBE RFin+ RFin– REFin+ REFin– TEST LOAD SIGNALS ADDRESS DECODER 2–BIT SHIFT REGISTER 22–BIT SHIFT REGISTER CONTROL LATCH LATCH MAIN DIVIDER REFERENCE DIVIDER LATCH AMP 11 12 6 5 15 14 13 2 PHASE DETECTOR COMP PUMP BIAS PUMP CURRENT SETTING GND 4 7 3 GNDCP VDD RSET VDDCP PHP LOCK 10 9 8 1 PON16 Figure 2. Block Diagram PINNING SYMBOL PIN DESCRIPTION LOCK 1 Lock detect output TEST 2 Test (should be either grounded or connected to VDD) VDD 3 Digital supply GND 4 Digital ground RFin+ 5 RF input to main divider RFin– 6 RF input to main divider GNDCP 7 Charge pump ground PHP 8 Main normal chargepump VDDCP 9 Charge pump supply voltage RSET 10 External resistor from this pin to ground sets the chargepump current REFin– 11 Reference input REFin+ 12 Reference input CLOCK 13 Programming bus clock input DATA 14 Programming bus data input STROBE 15 Programming bus enable input PON 16 Power down control 1999 Nov 04 3 Philips Semiconductors Product specification Philips Semiconductors Product specification 6 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER MIN. MAX. UNIT VDD Digital supply voltage –0.3 +5.5 V VDDCP Analog supply voltage –0.3 +5.5 V DVDDCP–VDD Difference in voltage between VDDCP and VDD (VDDCP . VDD) –0.3 +2.8 V Vn Voltage at pins 1, 2, 5, 6, 11 to 16 –0.3 VDD + 0.3 V V1 Voltage at pin 8, 9 –0.3 VDDCP+ 0.3 V DVGND Difference in voltage between GNDCP and GND (these pins should be connected together) –0.3 +0.3 V Tstg Storage temperature –55 +125 ..C Tamb Operating ambient temperature –40 +85 ..C Tj Maximum junction temperature 150 ..C Handling Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is desirable to take normal precautions appropriate to handling MOS devices. THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j–a Thermal resistance from junction to ambient in free air 120 K/W 1999 Nov 04 4 Philips Semiconductors Product specification Philips Semiconductors Product specification 6 CHARACTERISTICS VDDCP = VDD = +3.0V, Tamb = +25°C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply; pins 3, 9 VDD Digital supply voltage 2.7 – 5.5 V VDDCP Analog supply voltage VDDCP = VDD 2.7 – 5.5 V IDDTotal Synthesizer operational total supply current VDD = +3.0V – 6.2 7.3 mA IStandby Total supply current in power-down mode logic levels 0 or VDD – 1 TBD mA RFin main divider input; pins 5, 6 fVCO VCO input frequency 350 – 1300 MHz VRFin(rms) AC-coupled input signal level Rin (external) = Rs = 50W; single-ended drive; max. limit is indicative @ 500 to 1300 MHz –18 – 0 dBm ZIRFin Input impedance (real part) fVCO = 1.2 GHz – 625 – W CIRFin Typical pin input capacitance fVCO = 1....