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Anleitung Zusammenfassung
With a supply voltage (VP) of 14,4 V, an output power of 24 W can be delivered into a 4 W Bridge Tied Load (BTL), or when used as a stereo amplifier, 2 . 12 W into 2 W or 2 . 7 W into 4 W. Features · Flexibility - stereo as well as mono BTL · High output power · Low offset voltage at the output (important for BTL) · Large useable gain variation · Load dump protection · Good ripple rejection · A.C. short-circuit-safe to ground · Thermal protection · Low number, small sized external components · Low stand-by current possibility · Internal limiting of bandwidth for high frequencies · High reliability. QUICK REFERENCE DATA PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT Supply voltage range: operating non-operating non-operating, load dump protection Repetitive peak output current Total quiescent current Stand-by current Switch-on current Input impedance Storage temperature range Crystal temperature pins 1, 2, 12 and 13 VP VP VP IORM Itot Isb Iso |ZI| Tstg Tc 6,0 - - - - - 0,15 1 -65 - 14,4 - - - 75 - 0,35 - - - 18,0 28,0 45,0 4,0 120 2 0,80 - + 150 150 V V V A mA mA mA MW °C °C PACKAGE OUTLINE TDA1510AQ: 13-lead SIL-bent-to-DIL; plastic power (SOT 141C); SOT141-6; 1996 Aug 01. January 1992 2 Philips Semiconductors Product specification Philips Semiconductors Product specification TDA1510AQ power amplifier Fig.1 Functional diagram; heavy lines indicate signal paths. January 1992 3 Philips Semiconductors Product specification Philips Semiconductors Product specification TDA1510AQ power amplifier RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) PARAMETER CONDITIONS SYMBOL MIN. MAX. UNIT Supply voltage: operating non-operating non-operating, load dump protection Peak output current Total power dissipation Storage temperature range Crystal temperature pin 10 during 50 ms see Fig.2 VP VP VP IOM Ptot Tstg Tc - - - - -65 - 18 28 45 6 + 150 + 150 V V V A °C °C Fig.2 Power derating curves. January 1992 4 Philips Semiconductors Product specification Philips Semiconductors Product specification TDA1510AQ power amplifier HEATSINK DESIGN EXAMPLE The derating of the encapsulation requires the following external heatsink (for sine-wave drive): (Rth j-mb) = 3,5 K/W 24 W BTL (4 W) or 2 . 12 W stereo (2 W); maximum sine-wave dissipation = 12 W; Tamb =65 °C (maximum): 150 – 65 = ----------------------– 3,5 = 3,5 K/W Rth h-a 12 2 . 7 W stereo (4 W); maximum sine-wave dissipation = 6 W; Tamb =65 °C (maximum): 150 – 65 = ----------------------– 3,5 = 10,5 K/W Rth h-a 12 D.C. CHARACTERISTICS PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT Supply voltage range VP 6,0 14,4 18,0 V Repetitive peak output current IORM - - 4,0 A Total quiescent current Itot - 75 120 mA Stand-by current Isb - - 2 mA Switch-on current V11 . V10; note 1 Iso 0,15 0,35 0,80 mA January 1992 5 Philips Semiconductors Product specification Philips Semiconductors Product specification TDA1510AQ power amplifier A.C. CHARACTERISTICS Tamb =25 °C; VP = 14,4 V; f = 1 kHz; unless otherwise specified PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT Bridge Tied Load application (BTL) Output power with bootstrap Open loop voltage gain Closed loop voltage gain Frequency response Input impedance Noise output voltage (r.m.s. value) Supply voltage ripple rejection D.C. output offset voltage between channels Power bandwidth note 6; RL = 4 W VP = 13,2 V dtot = 0,5% dtot = 10% VP = 14,4 V dtot = 0,5% dtot = 10% note 2 at -3 dB; note 3 note 4 f = 20 Hz to 20 kHz RS = 0 W RS = 10 W RS = 10 kW; according to IEC 179 curve A f = 100 Hz; note 5 -1 dB; dtot = 0,5% Po Po Po Po Go Gc fr |Zi| Vn (rms) Vn (rms) Vn (rms) SVRR |DV5-9| B - - 15,5 20,0 - 39,5 - 1 - - - 42 - - 15,0 20,0 18,0 24,0 75 40,0 20 to > 20 k - 0,2 0,35 0,25 50 2 30 to > 40 k - - - - - 40,5 - - - 0,8 - - 50 - W W W W dB dB Hz MW mV mV mV dB mV Hz January 1992 6 Philips Semiconductors Product specification Philips Semiconductors Product specification TDA1510AQ power amplifier PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT Stereo application Output power; with bootstrap note 6; RL = 4 W VP = 13,2 V dtot = 0,5% Po - 4,5 - W dtot = 10% VP = 14,4 V Po - 6,0 - W dtot = 0,5% Po 4,5 5,5 - W dtot = 10% RL = 2 W VP = 13,2 V Po 6,0 7,0 - W dtot = 0,5% Po - 7,5 - W dtot = 10% VP = 14,4 V Po - 10,0 - W dtot = 0,5% Po 7,75 9,0 - W Output power; without bootstrap dtot = 10% notes 6, 8 and 9 RL = 4 W VP = 14,4 V Po 10,0 12,0 - W Frequency response dtot = 10% notes 3 and 6 Po - 6 - W Supply voltage ripple rejection -3 dB note 5 fr - 40 to > 20 k - Hz Channel separation f = 1 kHz RS = 10 kW; SVRR - 50 - dB f = 1 kHz a 40 50 - dB Closed loop voltage gain Noise output voltage (r.m.s. value) note 7 f = 20 Hz to 20 kHz; Gc 39,5 40,0 40,5 dB RS = 0 W Vn (rms) - 0,15 - mV RS = 10 kW RS = 10 kW; according to Vn (rms) - 0,25 - mV IEC179 curve A Vn (rms) - 0,2 - mV January 1992 7 Philips Semiconductors Product specification 24 W BTL or 2 x 12 W stereo car radio TDA1510AQ power amplifier Notes to the characteristics 1....